USCi technology and products enable affordable power efficiency in key markets that drives a new and greener economy.
Wind and solar power generation
Electrification of transportation such as automobiles and next generation trains
Emerging Smartgrid technologies that are adding intelligence to our power grid
Higher efficiency power generation and conversion
And numerous other applications that require higher efficiency, compact designs with demanding thermal constraints
USCi technology and products are uniquely positioned to leverage the lower cost of outsourced manufacturing capabilities in silicon carbide substrates, epitaxy, and foundries for production device fabrication. This dynamic is what continues to fuel the growth of Digital and Analog IC's and the time is now for Silicon Carbide (SiC). This advancement for SiC will create lower cost of goods, better continuity of supply, and improved quality for these demanding markets.
Why SiC now?
Demands for higher efficiency will grow the SiC market to >$2B in the next 10 years with existing applications and new emerging higher voltage markets
Investments from major players in SiC materials, including new substrate manufacturers, and anticipated move to 6" wafers
Diodes are already in mass production. Transistors emerging hence increasing visibility and acceptance
SiC is moving away from niche applications into mainstream power electronics applications
Portfolio of strong technology patents
Demonstrated product performance
Breadth of products
Market changing benefits in terms of long term cost and continuity of supply
Address: Unit C, 18/F World Tech Centre, 95 How Ming Street, Kwun Tong, Kowloon, Hong Kong.